Abstracts project on silicon photonics

• ·         "Silicon photonics meets nonlinear organic materials"

W. Freude¹, J.-M. Brosi,¹ C. Koos,¹ P. Vorreau,¹ L. C. Andreani,² P. Dumon,³ R. Baets,³ B. Esembeson,⁴ I. Biaggio,⁴ T. Michinobu,⁵ F. Diederich,⁵ and J. Leuthold ¹_,

¹Institute of High-Frequency and Quantum Electronics, University of Karlsruhe, 76131 Karlsruhe, Germany,  

²Department of Physics “A. Volta”, University of Pavia, Italy,

³Photonics Research Group, Ghent University − IMEC, Belgium, 

⁴Department of Physics, Lehigh University, USA,

⁵Laboratorium für Organische Chemie, ETH Zürich, Switzerland

Abstract: Depositing a low-index highly-nonlinear material on an appropriately structured silicon-on-insulator (SOI) waveguide combines the power of both material systems and results in extremely large effective nonlinearities. To this end, high index-contrast silicon photonic slot waveguides which confine light strongly in the low-index slot region can be filled with highly-nonlinear organic materials. We report on the design of a 100 Gbit/s / 1 V modulator based on an 80 μm long slow-light SOI photonic crystal covered with a χ(2)-nonlinear polymer, and we demonstrate demultiplexing of a 120 Gbit/s signal to 10 Gbit/s with four-wave mixing in a 6 mm long SOI slot waveguide, on which an organic material with a high χ(3)-nonlinearity was deposited with a molecular beam.

• Active III-V Photonic Crystal devices integrated onto silicon wafers

Fabrice Raineri - Laboratorie de Photonique et Nanostructures, CNRS

Abstract: Hybrid integrated structures allow us more freedom to tailor the optical properties of our devices. By bonding active and passive wafers together, we can combine many different functionalities on one chip. Optical sources and detectors have already been demonstrated in III-V materials coupled to the Silicon-On-Insulator waveguide system, in which compact filters and interconnects have been fabricated. The main advantage is that we are no longer restricted by the linear absorption of active-waveguiding structures. Additionally, the optimum materials for particular non-linear functions can be selected. The admixture of different physical material properties can benefit the optical properties of the devices, for example, permitting CW, room temperature operation of novel lasers, as we will discuss. As a first step with a hybrid material system, we report on the continuous wave operation of a 2 dimensional photonic crystal band edge laser at room temperature near 1.55μm in an InGaAs/InP photonic crystal. The photonic crystal slab is integrated onto a Silicon chip by means of Au/In bonding technology, which combines two advantages, efficient heat sinking and broad band reflectivity. A flat dispersion band-edge photonic mode is used for surface normal operation. The laser dynamics is also studied under ultrashort optical excitation, the temporal behaviour of the emission being measured thanks to an up-conversion technique. The next step will be to couple light between the III-V photonic crystal and SOI waveguides. First results on the fabrication of such structures will be also discussed.